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GaAs nanostructure capped with AlGaAs layer

Based on

1 Articles
2011 Most recent source

Composition

1

aluminium gallium arsenide

aluminum gallium arsenide AlGaAs
Type Complex Compound
Formula
Role layer
2

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula GaAs
Role layer
3

aluminium gallium arsenide

aluminum gallium arsenide AlGaAs
Type Complex Compound
Formula
Role layer
4

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula GaAs
Role layer

Properties

General physical and chemical properties

Property Value Source
photoluminescence dependent on capping layer deposition temperature

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Applications

Characterization

Method Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic tetramer
  • low temperature gallium arsenide
  • aluminium
See all (4)
  1. iKnog
Product

GaAs nanostructure capped with AlGaAs layer

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • arsenic tetramer
  • low temperature gallium arsenide
  • aluminium
See all (4)
  1. SzQ5P
Product

GaAs nanostructure capped with AlGaAs layer

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • arsenic tetramer
  • low temperature gallium arsenide
  • aluminium
See all (4)
  1. bUtaU
Product

GaAs nanostructure capped with AlGaAs layer

References

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