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Al0.33Ga0.67As/GaAs nanostructured material

Based on

1 Articles
2011 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role layer
2

gallium aluminium arsenide

gallium aluminium arsenide aluminum gallium arsenide Al0.33Ga0.67As GaAlAs
Type Single Compound
Formula Al0.33Ga0.67As
Role layer
3

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role layer
4

doped GaAs

Type Complex Compound
Formula
Role layer
5

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role layer
6

gallium aluminium arsenide

gallium aluminium arsenide aluminum gallium arsenide Al0.33Ga0.67As GaAlAs
Type Single Compound
Formula Al0.33Ga0.67As
Role layer
7

doped Al0.33Ga0.67As

Type Complex Compound
Formula
Role layer
8

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role layer

Properties

General physical and chemical properties

Property Value Source
electron mobility

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Applications

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • doped GaAs
  • low temperature gallium arsenide
  • doped Al0.33Ga0.67As
See all (4)
Product

Al0.33Ga0.67As/GaAs nanostructured material

References

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