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semipolar InGaN/GaN quantum well structure on r-plane sapphire substrate

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

nonpolar gallium nitride

Type Single Compound
Formula GaN
Role layer
2

InGaN/GaN QW structure

Type Nano Material
Formula
Role layer
3

nonpolar gallium nitride

Type Single Compound
Formula GaN
Role layer

Properties

Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • r-plane sapphire
  • ammonia
  • trimethanidogallium
Product

semipolar InGaN/GaN quantum well structure on r-plane sapphire substrate

Thickness: 130 nm

Thickness: 7000 nm

Medium: none

Support: r-plane sapphire

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • r-plane sapphire
  • ammonia
  • trimethanidogallium
  1. cVzjU7UDhvxZ7asx2Q6
Product

semipolar InGaN/GaN quantum well structure on r-plane sapphire substrate

Thickness: 130 nm

Thickness: 6000 nm

Medium: none

Support: m-plane sapphire

References

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