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Ti/Al ohmic contact on p-type implanted 4H-SiC

Based on

1 Articles
2011 Most recent source

Composition

1

n-type silicon carbide

n-type 4H-SiC
Type Complex Compound
Formula
Role layer
2

Al-implanted silicon carbide

Al-implanted 4H-SiC
Type Complex Compound
Formula
Role layer
3

Al nanoparticles

Type Nano Material
Formula
Role layer
4

titanium silicide carbide

titanium silicon carbide TSC
Type Single Compound
Formula Ti3SiC2
Role layer
5

aluminium

aluminum
Type Single Compound
Formula Al
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
specific contact resistance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • aluminium
  • n-type silicon carbide
  1. GQBn9
  2. uWdu0cTG9
Product

Ti/Al ohmic contact on p-type implanted 4H-SiC

Roughness: 44 nm

Thickness: < 6000 nm

Thickness: ~ 175 nm

Thickness: ~ 30 - ~ 180 nm

Thickness: ~ 300 nm

Medium/Support: none

References

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