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arc-discharge SWNT/APTES/SiO2/heavily p-doped Si

Based on

1 Articles
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role layer
2

3-aminopropyltriethoxysilane

APTES
Type Single Compound
Formula C9H23NO3Si
Role layer
3

HiPCO single-wall carbon nanotubes

HiPCO SWNT
Type Nano Material
Formula
Role layer

Properties

Applications

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
  1. t8EjnMMG7usW
  2. H8uVFR
Product

arc-discharge SWNT/APTES/SiO2/heavily p-doped Si

Thickness: 50 nm

Medium: none

Support: heavily p-doped Si

Method 2

Type: Physical formation
Source:
  1. cyezyfjHuXAi
  2. ALKo03
Product

arc-discharge SWNT/APTES/SiO2/heavily p-doped Si

Thickness: 50 nm

Medium: none

Support: heavily p-doped Si

Method 3

Type: Physical formation
Source:
  1. dnJYYJRDS1bf
  2. AmvpBo
Product

arc-discharge SWNT/APTES/SiO2/heavily p-doped Si

Thickness: 50 nm

Medium: none

Support: heavily p-doped Si

Method 4

Type: Physical formation
Source:
  1. DDMatXKXzVhZ
  2. CgKbb0
Product

arc-discharge SWNT/APTES/SiO2/heavily p-doped Si

Thickness: 50 nm

Medium: none

Support: heavily p-doped Si

References

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