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n-type doped GaAs nanowires

Based on

1 Articles
2011 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

tin-doped gallium arsenide

Type Complex Compound
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Source
charge density distribution dependent on precursor ratio

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Applications

Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • tertiary-butyl-arsine
  • tetraethyl tin
  • trimethanidogallium
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Product

n-type doped GaAs nanowires

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • tertiary-butyl-arsine
  • tetraethyl tin
  • trimethanidogallium
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Product

n-type doped GaAs nanowires

References

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