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MnAs epilayer grown on GaAs (110)

Based on

1 Articles
2011 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula GaAs
Role layer
2

manganese arsenide

Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Source
first-order magnetostructural phase transition temperature

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Applications

Area Application Source
electronics

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • gallium
  1. hsmk6uah4Rhg3NG3br1sVQheUcUkf
Product

MnAs epilayer grown on GaAs (110)

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • gallium
  1. 0nWaAxzNx4GuSWtwMVQ4XEX6pQRsT
Product

MnAs epilayer grown on GaAs (110)

References

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