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GaN wires grown on Si(111) with an intermediate AlN layer

Based on

1 Articles
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

silicon-rich silicon nitride

Si-reached silicon nitride silicon nitride a-SiNx SRSN
Type Single Compound
Formula SiN(x)
Role layer
2

aluminium nitride

aluminum nitride
Type Single Compound
Formula AlN
Role layer
3

gallium nitride

Type Single Compound
Formula GaN
Role layer

Properties

Applications

Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • ammonia
  • trimethyl aluminum
  1. vvT2Mw2Y4xKLs
  2. qtFmtoU
Product

GaN wires grown on Si(111) with an intermediate AlN layer

Thickness: 10 nm

Thickness: 2 nm

Thickness: 24.5 - 25.5 nm

Medium: none

Support: silicon

References

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