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SiO2 film

Based on

365 Articles
21 Patents
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
Porosity

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refractive index
water contact angle

Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
compounds sensor for hepcidin in human serum

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Applications

Area Application Nanomaterial Variant Source
coatings

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electronics
raw materials/precursors/templates

Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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field emission scanning electron microscopy
other
scanning electron microscopy
transmission electron microscopy
UV
UV-Vis spectroscopy
X-ray photoelectron spectroscopy

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • bis(diethylamino)silane
  1. 2pHBSs
  2. BYQ
  3. A3yRePm5bld4evyoeZrYWI39TpqIDHKMGxikcg3DC6ETCqI0Ks4Nc
Product

SiO2 film

Thickness: ~ 1 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • silicic acid tetraethyl ester
  1. g0KkXR7BV9YmzWwcqw8rDVqF4iryjzFrKwsKjmH5P8Jg
  2. cNwSJR82eFpOzziMkB7azs1hbg4w7Ll
  3. s0kqp3Xzhb4nVxFIa
  4. yM0cN1W7
  5. Q2M7
Product

SiO2 film

Aggregate diameter: ~ 100 - ~ 200 nm

Pore spacing: ~ 3.5 - ~ 4 nm

Thickness: ~ 70 nm

Medium: none

Support: tin-doped indium oxide

Method 3

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-GaAs
Product

SiO2 film

Array periodicity: ~ 1000 nm

Hole diameter: 80 nm

Thickness: 20 nm

Medium: none

Support: n-GaAs

Method 4

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-GaAs
Product

SiO2 film

Array diameter: ~ 20000 nm

Array periodicity: ~ 1000 nm

Hole diameter: 80 nm

Thickness: 20 nm

Medium: none

Support: n-GaAs

Method 5

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-GaAs
Product

SiO2 film

Array diameter: ~ 200000 nm

Array periodicity: ~ 1000 nm

Hole diameter: 80 nm

Thickness: 20 nm

Medium: none

Support: n-GaAs

References

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