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InGaN/GaN multiple quantum well

Based on

1 Articles
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium nitride

Type Single Compound
Formula GaN
Role layer
2

gallium nitride

Type Single Compound
Formula GaN
Role layer
3

InGaN/GaN quantum well

InGaN/GaN QW
Type Nano Material
Formula
Role layer
4

gallium nitride

Type Single Compound
Formula GaN
Role layer

Properties

Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • sapphire
  1. kMoO9GJdt8WR2UKQh
  2. jCaJUVN9pVnKxYxxaQndIE
Product

InGaN/GaN multiple quantum well

Thickness: 20 nm

Thickness: 4000 nm

Thickness: 8.0 nm

Thickness: 9.9 nm

Medium: none

Support: sapphire

References

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