Access easily searchable nanoscience data, synthesis methods and literature
Image only illustrates the order and placement of components as described in literature.
boron-doped Ge0.946Sn0.054 alloy layer
Thickness: 90 nm
Support: P-doped Ge buffer layer on n-type Ge substrate
To view content please choose from the following:
© 2016 Macmillan Publishers Limited. Part of Springer Nature. All rights reserved.