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SiOxNy layer on Si

Based on

5 Articles
2017 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role raw materials
2

germanium

Type Single Compound
Formula Ge
Role dopant

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
cyclic voltammogram

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Applications

Characterization

Method Nanomaterial Variant Source
infrared spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • oxygen
  • nitrogen
Product

SiOxNy layer on Si

Thickness: 20.8 nm

Medium: none

Support: silicon

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • oxygen
  • nitrogen
Product

SiOxNy layer on Si

Thickness: 19.5 nm

Medium: none

Support: silicon

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • hexadecyltrimethylammonium bromide
  • silicic acid tetraethyl ester
  1. 9G1uAEljxhlus12IB1WIDqkquarBaKh
  2. dTdL6Si917Q0TAdO1
  3. bLIKiCqJ
  4. mXS0
Product

SiOxNy layer on Si

Aggregate diameter: ~ 100 - ~ 200 nm

Pore spacing: ~ 3.5 - ~ 4 nm

Thickness: ~ 70 nm

Medium: none

Support: tin-doped indium oxide

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • oxygen
  • nitrogen
Product

SiOxNy layer on Si

Thickness: 18.9 nm

Medium: none

Support: silicon

References

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