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roughened n-GaN

Based on

1 Articles
2013 Most recent source

Composition

1

silicon-doped gallium nitride

n-GaN
Type Complex Compound
Formula
Role layer
2

unintentionally doped InGaN/GaN multiple quantum wells

In0.18Ga0.82N/GaN quantum wells InGaN/GaN MQW
Type Nano Material
Formula
Role layer
3

Mg-doped aluminium gallium nitride

p-AlGaN
Type Complex Compound
Formula
Role layer
4

magnesium-doped gallium nitride

p-GaN
Type Complex Compound
Formula
Role layer

Properties

Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon-doped gallium nitride
Product

roughened n-GaN

Diameter: ~ 515 nm

Pitch: ~ 750 nm

Substrate thickness: ~ 1200 nm

Thickness: 120 nm

Thickness: 50 nm

Thickness: ~ 800 nm

Medium: none

Support: silicon-doped gallium nitride

References

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