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three-dimensional silicon quantum dot superlattice

Based on

1 Articles
1 Patents
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

silicon carbide

carborundum
Type Single Compound
Formula SiC
Role raw materials
2

silicon quantum dots

Si nanodisks Si-ND
Type Nano Material
Formula
Role fillers

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap

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Applications

Area Application Nanomaterial Variant Source
lighting devices

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon carbide
  • n-type silicon
  1. vkLN50
Product

three-dimensional silicon quantum dot superlattice

Center-to-center distance: 8.7 nm

Interlayer spacing: 2 nm

Spacing in layer: 2.0 - 2.3 nm

Medium: none

Support: n-type silicon

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • silicon carbide
  1. qCQMhRXpQxRl
  2. xz364a
Product

three-dimensional silicon quantum dot superlattice

Center-to-center distance: 8.7 nm

Interlayer spacing: 2 nm

Spacing in layer: 2.3 nm

Medium/Support: none

References

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