Loading ...

GaAsSb/GaAs QW Structure

Based on

1 Articles
2010 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula GaAs
Role template
2

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula GaAs
Role layer
3

aluminium gallium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type Single Compound
Formula Ga0.7Al0.3As
Role layer
4

aluminium gallium arsenide

Al-doped GaAs
Type Single Compound
Formula Al0.15Ga0.85As
Role layer
5

gallium arsenide antimonide

GaAs1-xSbx GaAsSb
Type Single Compound
Formula GaAsSb
Role layer
6

aluminium gallium arsenide

Al-doped GaAs
Type Single Compound
Formula Al0.15Ga0.85As
Role layer
7

aluminium gallium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type Single Compound
Formula Ga0.7Al0.3As
Role layer
8

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula GaAs
Role layer

Properties

Applications

Area Application Nanomaterial Variant Source
lasers

More information available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium arsenide antimonide
  • aluminium gallium arsenide
  • low temperature gallium arsenide
Product

GaAsSb/GaAs QW Structure

Layer 1 thickness: 300 nm

Layer 2 thickness: 50 nm

Layer 3 thickness: 50 nm

Layer 4 thickness: 7 nm

Layer 5 thickness: 50 nm

Layer 6 thickness: 50 nm

Layer 7 thickness: 30 nm

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial