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Cu/V alloy-based gate electrode

Based on

1 Patents
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

vanadium silicon oxide

Type Complex Compound
Formula
Role layer
2

copper

Type Single Compound
Formula Cu
Role layer
3

vanadium oxide

V-oxide
Type Single Compound
Formula VO(x)
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
contact resistance

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Applications

Area Application Nanomaterial Variant Source
electronic paper

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • soda-lime-silica glass
  • Cu/V alloy
Product

Cu/V alloy-based gate electrode

Thickness: 250 - 500 nm

Thickness: < 10 nm

Medium: none

Support: soda-lime-silica glass

References

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