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GaAsSb/GaAs QW Structure

Based on

1 Articles
2010 Most recent source

Composition

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role template
2

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role layer
3

aluminium gallium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type Single Compound
Formula Al0.3Ga0.7As
Role layer
4

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role layer
5

gallium arsenide antimonide

GaAs1-xSbx GaAsSb
Type Single Compound
Formula GaAsSb
Role layer
6

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role layer
7

aluminium gallium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type Single Compound
Formula Al0.3Ga0.7As
Role layer
8

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
photoluminescence intensity dependent on growth temperature

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Applications

Area Application Nanomaterial Variant Source
lasers

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium arsenide antimonide
  • aluminium gallium arsenide
  • low temperature gallium arsenide
Product

GaAsSb/GaAs QW Structure

Layer 1 thickness: 300 nm

Layer 2 thickness: 50 nm

Layer 3 thickness: 50 nm

Layer 4 thickness: 7 nm

Layer 5 thickness: 50 nm

Layer 6 thickness: 50 nm

Layer 7 thickness: 30 nm

Medium/Support: none

References

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