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In0.1Ga0.9As nanowires

Based on

1 Articles
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium gallium arsenide

InGaAs
Type Single Compound
Formula In0.10Ga0.90As
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
magnetic field

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Applications

Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium arsenide
  • indium
  1. trXKyjGNRSCUV6
Product

In0.1Ga0.9As nanowires

Diameter: ~ 60 nm

Length: ~ 1000 nm

Medium/Support: none

References

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