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AlGaN/GaN heterostructure on sapphire substrate

Based on

1 Articles
2 Patents
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

p-type doped gallium nitride

Type Single Compound
Formula GaN
Role layer
2

p-type doped aluminium gallium nitride

Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility dependent on annealing

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

References

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