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GaAs/GaAs0.938Bi0.062/GaAs quantum well

Based on

1 Articles
2012 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

GaAs0.938Bi0.062

Type Single Compound
Formula GaAs0.938Bi0.062
Role layer
2

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
X-ray diffraction

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • bismuth
  • low temperature gallium arsenide
  1. yYACb
  2. eBMGXNBs2KbOSbcGc35Df
Product

GaAs/GaAs0.938Bi0.062/GaAs quantum well

Thickness: 300 nm

Thickness: 40 nm

Medium: none

Support: low temperature gallium arsenide

References

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