Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

1-30 pair InGaN/GaN multiple quantum well

Based on

1 Articles
2012 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type Single Compound
Formula GaN
Role layer
2

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type Single Compound
Formula GaN
Role layer
3

In0.15Ga0.85N/GaN bi-layers

Type Nano Material
Formula
Role layer

Properties

Applications

Characterization

Method Source
atomic force microscopy

More information available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium(III) arsenide
  • sapphire
  1. FDe03CtxllyQxQsMvjV3v1ufYfIgH
Product

1-30 pair InGaN/GaN multiple quantum well

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial