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organic field-effect transistor

Based on

1 Articles
2011 Most recent source

Composition

1

heavily doped Si

Type
Formula
Role
2

300 nm thick silica layer

300 nm thick SiO2 layer silicon dioxide film silica layer silica film SiO2 layer SiO2 film SiO2 film SO2 layer
Type
Formula
Role
3

1,1,1,3,3,3-hexamethyldisilazane

bis(trimethylsilyl)amine hexamethyl disilazane trimethylsilyl moiety hexamethyldisilazane hexamethyldisilane HDMS HMDS
Type
Formula (CH3)3SiNHSi(CH3)3
Role
4

film of cross-linked PSS-wrapped MWNT

Type
Formula
Role
5

6,13-bis-(triisopropylsilylethynyl) pentacene

6,13-bis(2-triisopropylsilylethynyl)pentacene 6,13-bis-(triisopropylsilylethynyl) pentacene 6,13-bis(triisopropylsilylethynyl) pentacene 6,13-bis(tri-isopropylsilylethynyl)pentacene 6,13-bis(triisopropylsilylethynyl)pentacene 6,13-Bis(triisopropylsilylethynyl)pentacene bis(triisopropylsilylethynyl)pentacene TIPS Pentacene TIPS pentacene TIPS-Pentacene TIPS-pentacene TIPS-PEN TIPS-P5 TIPS-Pc TIPS-Pn
Type
Formula C44H54Si2
Role

Properties

General physical and chemical properties

Property Value Source
mobility

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

organic field-effect transistor

References

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