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disposable well gate field-effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role back gate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
4

titanium/titanium nitride/aluminum/titanium nitride

As-doped Ti/TiN/Al/TiN
Type Complex Compound
Formula
Role source
5

titanium/titanium nitride/aluminum/titanium nitride

As-doped Ti/TiN/Al/TiN
Type Complex Compound
Formula
Role drain
6

tin-doped indium oxide/APTES-modified tin oxide/polydimethylsiloxane/avian influenza virus antibody

ITO/APTES-modified SnO2/PDMS/AIV antibody
Type Nano Material
Formula
Role disposable well gate (DWG)

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
sensor for avian influenza virus (AIV)

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Applications

Area Application Nanomaterial Variant Source
diagnostics

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Characterization

Biological effects

Preparation

References

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