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few-layer black phosphorus carbide field-effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

few-layer black phosphorus carbide

few-layer b-PC 2D PxCy sheets 2D b-PC
Type Nano Material
Formula
Role source
4

nickel phosphide alloy/aluminum film

Type Nano Material
Formula
Role source
5

nickel phosphide alloy/aluminum film

Type Nano Material
Formula
Role drain
6

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role passivation layer

Properties

General physical and chemical properties

Property Value Source
contact resistance of Ohmic-like contacts

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Applications

Area Application Source
electronics

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • black phosphorus
  • silica/silicon
  1. C4IilZQk5kkGeDYh
Product

few-layer black phosphorus carbide field-effect transistor

References

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