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TiO2-based RRAM device with ionic liquid gating-motivated local conductivity switching

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

chromium

Type Single Compound
Formula Cr
Role adhesion layer
3

platinum

Type Single Compound
Formula Pt
Role bottom contact
4

titanium(IV) oxide

titanium dioxide titanium oxide titania
Type Single Compound
Formula TiO2
Role transition metal oxide (TMO) layer
5

palladium

Type Single Compound
Formula Pd
Role upper gate
6

N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium tetrafluoroborate

N,N-diethyl-N-methyl-N-2-methoxyethyl ammonium tetrafluoroborate DEME-BF4 DEMEBF4
Type Single Compound
Formula C8H20BF4NO
Role ionic liquid (IL) gating layer
7

silicon nitride membrane

Type Nano Material
Formula
Role membranes

Properties

General physical and chemical properties

Property Value Source
electric current dependent on bias presence

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Applications

Area Application Source
data storage

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Characterization

Method Source
electron energy-loss spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

TiO2-based RRAM device with ionic liquid gating-motivated local conductivity switching

References

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