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highly-crystalline monolayer molybdenum disulfide/hexagonal boron nitride field effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

hexagonal boron nitride film

hBN film
Type
Formula
Role
4

MoS2 monolayer

Type Nano Material
Formula
Role semiconductor layer

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Product

highly-crystalline monolayer molybdenum disulfide/hexagonal boron nitride field effect transistor

References

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