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amorphous In-Ga-Zn-O thin-film transistor

Based on

1 Articles
2011 Most recent source

Composition

1

a-IGZO

Type
Formula
Role
2

silicon

Type
Formula Si
Role
3

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
4

aluminium oxide film

Al2O3 thin film alumina film Al2O3 film
Type
Formula
Role
5

Mo gate electrode

Type
Formula
Role
6

silicon oxide nanolayer

200 nm thick SiO2 layer SiO2 passivation layer silicon dioxide layer silicon dioxide film silica layer silica film SiO2 layer SiO2 film SiO2 film
Type
Formula
Role
7

molybdenum

Type
Formula Mo
Role
8

SiO2 interfacial dielectric layer

Type
Formula
Role

Properties

Applications

Area Application Nanomaterial Variant Source
sensors (excluding biosensors)

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • zinc
  • atomic oxygen
See all (6)
Product

amorphous In-Ga-Zn-O thin-film transistor

Size: not specified

Medium/Support: none

References

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