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HgTe QD-based phototransistor

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

1-thioglycerol-capped HgTe quantum dots

1-TG-capped HgTe QD
Type Nano Material
Formula
Role channels
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
charge carrier mobility

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Sensor properties

Type of sensor Sensor property Source
light sensor

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Applications

Area Application Source
sensors (excluding biosensors)

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si/SiO2 substrate
Product

HgTe QD-based phototransistor

Method 2

Type: Physical formation
Source:
Starting materials
  • Si/SiO2 substrate
Product

HgTe QD-based phototransistor

Method 3

Type: Physical formation
Source:
Starting materials
  • Si/SiO2 substrate
Product

HgTe QD-based phototransistor

Method 4

Type: Physical formation
Source:
Starting materials
  • Si/SiO2 substrate
Product

HgTe QD-based phototransistor

Method 5

Type: Physical formation
Source:
Starting materials
  • Si/SiO2 substrate
Product

HgTe QD-based phototransistor

References

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