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few-layer BP-based field-effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

polyimide

Type Polymer
Formula
Role substrate
2

Ti/Au

Type Nano Material
Formula
Role gate
3

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
4

black phosphorus few-layer flakes

black phosphorus nanoflakes black phosphorus nanosheets black phosphorus flakes BP few-layer flakes BP nanoflakes BP nanosheets BP flakes
Type Nano Material
Formula
Role semiconductor layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain
7

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role capping layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
chopped light-induced photocurrent

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor for near-infrared light

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Applications

Area Application Nanomaterial Variant Source
diagnostics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • polyimide
  1. 97D5hv95Lz8GXrhHYIdiRErRj2kahN7
Product

few-layer BP-based field-effect transistor

Size: not specified

Medium/Support: none

References

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