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BP-based p-n homojunction diode

Based on

1 Articles
2017 Most recent source

Composition

1

p-type doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

few-layer black phosphorus flakes

black phosphorus nanosheets few-layer BP flakes
Type Nano Material
Formula
Role channels
4

poly(methyl methacrylate)

methyl methacrylate resin PMMA
Type Polymer
Formula
Role surface protecting layer
5

potassium-modified few-layer black phosphorus flakes

potassium-doped black phosphorus nanosheets K-modified few-layer BP flakes
Type Nano Material
Formula
Role channels
6

titanium/gold film

Ti/Au film
Type Nano Material
Formula
Role source
7

titanium/gold film

Ti/Au film
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. 1kWDGz2RuA8OQ3dipydHYpSh732ZGDjoyNebvsk
Product

BP-based p-n homojunction diode

Method 2

Type: Physical formation
Source:
Starting materials
  1. GA5c4Z2j6gMgp26sx2ucMqohCMpHzfXyxmjn6ZF
Product

BP-based p-n homojunction diode

References

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