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InAs/InGaAsSb/GaSb nanowire tunnel field effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

n++-InAs

Type
Formula
Role
3

n++-InAs nanowire

Type
Formula
Role
4

unintentionally doped InAs nanowire

Type
Formula
Role
5

p++-In0.1Ga0.9As0.88Sb0.12 nanowire

Type
Formula
Role
6

p++-GaSb nanowire

Type
Formula
Role
7

HfO2/Al2O3

Type Complex Compound
Formula
Role high-κ dielectric layer
8

nickel

Type Single Compound
Formula Ni
Role adhesion layer
9

gold

Type Single Compound
Formula Au
Role drain
10

silicon-rich silicon oxide

SRSO SiOx
Type Single Compound
Formula SiO(x)
Role drain-gate spacer
11

W film

Type Nano Material
Formula
Role gate
12

photoresist S1800

Type Complex Compound
Formula
Role source-gate spacer
13

gold

Type
Formula Au
Role
14

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

References

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