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HfO2-based RRAM device

Based on

1 Articles
2017 Most recent source

Composition

1

titanium

Type
Formula Ti
Role
2

titanium nitride

Type Single Compound
Formula TiN
Role electrodes
3

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role insulators
4

vanadium

Type Single Compound
Formula V
Role electrodes
5

platinum

Type Single Compound
Formula Pt
Role protective layer

Properties

General physical and chemical properties

Property Value Source
electric current dependent on temperature

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Applications

Area Application Source
data storage

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Characterization

Method Source
energy dispersive X-ray spectroscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • hafnium(IV) oxide
  • titanium nitride on titanium
  1. 5AccpzKSGxZ9nz1V
Product

HfO2-based RRAM device

References

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