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germanium antimony telluride-based phase change graphene nanogap device

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
3

chromium

Type Single Compound
Formula Cr
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role bond pad
5

graphene nanoribbon with Ge2Sb2Te5 in nanogap

GST nanogap-incorporated graphene nanoribbon
Type Nano Material
Formula
Role nanogap electrode

Properties

General physical and chemical properties

Property Value Source
GST phase transfer current

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si/SiO2
Product

germanium antimony telluride-based phase change graphene nanogap device

Method 2

Type: Physical formation
Source:
Starting materials
  • Si/SiO2
Product

germanium antimony telluride-based phase change graphene nanogap device

Method 3

Type: Physical formation
Source:
Starting materials
  • Si/SiO2
Product

germanium antimony telluride-based phase change graphene nanogap device

Method 4

Type: Physical formation
Source:
Starting materials
  • Si/SiO2
Product

germanium antimony telluride-based phase change graphene nanogap device

Method 5

Type: Physical formation
Source:
Starting materials
  • Si/SiO2
Product

germanium antimony telluride-based phase change graphene nanogap device

References

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