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bilayer WSe2-separated highly rotationally aligned bilayer graphene flakes-based interlayer tunneling field-effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

hexagonal boron nitride

h-BN hBN
Type Single Compound
Formula BN
Role gate dielectrics
2

bilayer graphene flake

bilayer graphene graphene flake
Type
Formula
Role
3

bilayer tungsten selenide

WSe2 nanosheet bilayer WSe2
Type Nano Material
Formula
Role tunneling barriers
4

hexagonal boron nitride

h-BN hBN
Type Single Compound
Formula BN
Role gate dielectrics

Properties

General physical and chemical properties

Property Value Source
back gate capacitance

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

References

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