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In2O3 thin-film transistor

Based on

1 Articles
2017 Most recent source

Composition

1

degenerately doped silicon

Type Complex Compound
Formula
Role gate
2

hydroxylated silica

hydroxylated SiO2
Type Complex Compound
Formula
Role gate dielectrics
3

indium oxide film

In2O3 thin film In2O3 film
Type Nano Material
Formula
Role semiconductor layer
4

aluminium

aluminum
Type Single Compound
Formula Al
Role source
5

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • hydroxylated SiO2/Si
  • indium(III) nitrate hydrate
  1. r1Zpm8RJHWjgDHUq
  2. 9GWjL7wZFCn
  3. bAndJO
Product

In2O3 thin-film transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • hydroxylated SiO2/Si
  • indium(III) nitrate hydrate
  1. sVEo6Knr0GlNAGHj
  2. YALmK4rYaZe
  3. 2Kf0ox
Product

In2O3 thin-film transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • hydroxylated SiO2/Si
  • indium(III) nitrate hydrate
  1. 8U9dVdsUzpPEz0fv
  2. eaeHvL0BZ4a
  3. qNuc8A
Product

In2O3 thin-film transistor

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • hydroxylated SiO2/Si
  • indium(III) nitrate hydrate
  1. CrfkeIMRbRSYP0f1
  2. ogRlxO6ssgp
  3. mQ4lqv
Product

In2O3 thin-film transistor

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • hydroxylated SiO2/Si
  • indium(III) nitrate hydrate
  1. etWVoVaA4aKYs3Ch
  2. Db4j709Vz86
  3. Ma9Hr2
Product

In2O3 thin-film transistor

Size: not specified

Medium/Support: none

References

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