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single nanowire-based organic phototransistors

Based on

1 Articles
2017 Most recent source

Composition

1

heavily n-doped silicon

heavily n-doped Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

n-octadecyltrimethoxylsilane

n-octadecyltrimethoxysilane trimethoxy(octadecyl)silane noctadecyltrimethoxysilane octadecyltrimethoxy silane octadecyltrimethoxylsilane octadecyltrimethoxysilane trimethoxyoctadecylsilane C18TMOS C18TMS C18TMS n-ODMS ODTMS OTMOS ODMS ODTS OTMS TMOS ODS OTS TMS
Type
Formula C18H37Si(OCH3)3
Role
4

40 nm thick gold layer

gold electrode gold layer gold film Au layer Au film
Type Nano Material
Formula
Role source
5

40 nm thick gold layer

gold electrode gold layer gold film Au layer Au film
Type Nano Material
Formula
Role drain
6

(R)-N,N'-bis(1'-phenylethyl)perylene-3,4,9,10-tetracarboxyldiimide film

Type Nano Material
Formula
Role channels

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
channel layer HOMO energy

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • n-octadecyltrimethoxylsilane
  • heavily n-doped Si/SiO2
  1. bNqXyxeZSPjVWWIhV
Product

single nanowire-based organic phototransistors

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • n-octadecyltrimethoxylsilane
  • heavily n-doped Si/SiO2
  1. f2C9H29jVTPb9FdVx
Product

single nanowire-based organic phototransistors

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • n-octadecyltrimethoxylsilane
  • heavily n-doped Si/SiO2
  1. pj0izTnFtwHf9zpeu
Product

single nanowire-based organic phototransistors

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • n-octadecyltrimethoxylsilane
  • heavily n-doped Si/SiO2
  1. 80MMUXamH7NDfrrXa
Product

single nanowire-based organic phototransistors

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • n-octadecyltrimethoxylsilane
  • heavily n-doped Si/SiO2
  1. rvPRZrmmLFhdOiCJR
Product

single nanowire-based organic phototransistors

Size: not specified

Medium/Support: none

References

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