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thin film transistor

Based on

1 Articles
2017 Most recent source

Composition

1

polyimide

Type Polymer
Formula
Role substrate
2

silicon-rich silicon nitride

Si-reached silicon nitride silicon nitride a-SiNx SRSN
Type Single Compound
Formula SiN(x)
Role passivation layer
3

chromium

Type Single Compound
Formula Cr
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain
6

IZO

Type
Formula
Role
7

IDT-BT:TCNQ

Type
Formula
Role
8

CYTOP

Type Polymer
Formula
Role gate dielectrics
9

substoichiometric aluminum oxide

noncrystalline aluminum oxide anodized aluminum oxide aluminium suboxide oxidized aluminium aluminium oxide aluminum oxide alumina
Type Single Compound
Formula AlO(x)
Role wetting layer
10

P(VDF-TrFE-CFE)

Type Polymer
Formula
Role gate dielectrics
11

aluminium

aluminum
Type Single Compound
Formula Al
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon-rich silicon nitride
  • polyimide
Product

thin film transistor

Size: not specified

Medium/Support: none

References

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