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polyimide/ITO/TiN/Hf0.5Zr0.5O2/C60/Al vertical field-effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

polyimide

Type Polymer
Formula
Role substrate
2

tin-doped indium oxide

indium tin oxide ITO
Type
Formula
Role
3

titanium nitride

Type
Formula TiN
Role
4

hafnium zirconium oxide film

Hf0.5Zr0.5O2 film
Type
Formula
Role
5

example of optionally substituted fullerene

polycrystalline fullerite C60 fullerene nanoparticles C60 fullerene particles (C60-Ih)[5,6]fullerene (C60-Ih)[5,6]fullerene buckminsterfullerene example of fullerene fullerene-C60 anion fullerene molecule C60 nanoparticles fullerene layer C60 fullerenes C60 fullerenes C60 fullerene fullerene C60 fullerene-C60 [60]fullerene C60 fullerene C60-fullerene Ceo fullerene fullerene C60 fullerene-C60 fullerene[60] C60 molecule C60 molecule fullerenes C60 peapod fullerene buckyball C60 anion C60- C60 C60
Type Nano Material
Formula
Role channels
6

aluminium

aluminum
Type Single Compound
Formula Al
Role drain electrode

Properties

General physical and chemical properties

Property Value Source
drain current density

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Applications

Area Application Source
data storage

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Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • tin-doped indium oxide
  • polyimide
  • titanium nitride
  1. f5l0uFr
  2. Tzu45rr
  3. ghMXW
Product

polyimide/ITO/TiN/Hf0.5Zr0.5O2/C60/Al vertical field-effect transistor

References

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