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ITO/HfO2 nanowire-based random access memory (RRAM) device

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

hafnium oxide-coated ITO nanowires

Sn-doped In2O3/HfO2 nanowires ITO/HfO2 NW
Type
Formula
Role
4

titanium/gold film

Ti/Au film
Type Nano Material
Formula
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
field emission scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

ITO/HfO2 nanowire-based random access memory (RRAM) device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

ITO/HfO2 nanowire-based random access memory (RRAM) device

Size: not specified

Medium/Support: none

References

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