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back-gate WSe2 transistor/memory stack

Based on

1 Articles
2017 Most recent source

Composition

1

p-Si

Type Complex Compound
Formula
Role gate
2

silicon

Type Single Compound
Formula Si
Role gate dielectrics
3

tungsten diselenide nanosheets

WSe2 nanosheets
Type Nano Material
Formula
Role channels
4

chromium/gold film

Cr/Au film
Type Nano Material
Formula
Role source
5

chromium/gold film

Cr/Au film
Type Nano Material
Formula
Role drain
6

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role tunneling layer
7

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role trap layer
8

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role blocking layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain-source current dependent on back-gate voltage

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • tungsten(IV) selenide
Product

back-gate WSe2 transistor/memory stack

Size: not specified

Medium/Support: none

References

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