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electric double layer transistor

Based on

1 Articles
2017 Most recent source

Composition

1

titanium(IV) oxide

titanium dioxide titanium oxide titania
Type Single Compound
Formula TiO2
Role substrate
2

vanadium dioxide bars

VO2 bars
Type Nano Material
Formula
Role channels
3

ruthenium

Type Single Compound
Formula Ru
Role electrodes
4

gold

Type Single Compound
Formula Au
Role electrodes
5

1-hexyl-3-methylimidazolium bis((trifluoromethyl)sulfonyl)imide

1-hexyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide [C6mim][NTf2] [Hmim][TFSI] [HMIM]Ntf2 HMIM-TFSI HMITFSI
Type Single Compound
Formula C12H19F6N3O4S2
Role gate dielectrics

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
resistance dependent on gating time

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
X-ray diffraction

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • titanium(IV) oxide
  1. 2pGwXZ2B5WfGKwIlGYPAs8Iv4
  2. NxxRPYp
Product

electric double layer transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • titanium(IV) oxide
  1. WBB9PrRDjXTP0pR7XtS6RYyKB
  2. nd8SEO0
Product

electric double layer transistor

Size: not specified

Medium/Support: none

References

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