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hBN-encapsulated MoTe2 device

Based on

1 Articles
2017 Most recent source

Composition

1

highly doped silicon

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
3

chromium

Type Single Compound
Formula Cr
Role adhesion layer
4

platinum

Type Single Compound
Formula Pt
Role local bottom gate
5

hexagonal-boron nitride nanosheets

few layer boron nitride nanosheets hexagonal-boron nitride nanosheets hexagonal boron nitride monolayer monolayer hexagonal boron nitride hexagonal boron nitride flakes boron nitride nanosheets hexagonal boron nitride monolayer h-BN sheets single-layer h-BN thin h-BN layers h-BN nanosheets h-BN nanoflakes h-BN monolayer hBN nanosheets monolayer h-BN monolayer hBN BN nanosheets h-BN flakes h-BN layers h-BN NS hBN NS BN NS FBNNS h-BN BNNS hBN
Type Nano Material
Formula
Role gate dielectrics
6

chromium

Type Single Compound
Formula Cr
Role adhesion layer
7

example of graphene-like material

MoTe2 nanosheets MoTe2 nanoflakes monolayer MoTe2 MoTe2 monolayer ML MoTe2
Type Nano Material
Formula
Role semiconductor layer
8

hexagonal-boron nitride nanosheets

few layer boron nitride nanosheets hexagonal-boron nitride nanosheets hexagonal boron nitride monolayer monolayer hexagonal boron nitride hexagonal boron nitride flakes boron nitride nanosheets hexagonal boron nitride monolayer h-BN sheets single-layer h-BN thin h-BN layers h-BN nanosheets h-BN nanoflakes h-BN monolayer hBN nanosheets monolayer h-BN monolayer hBN BN nanosheets h-BN flakes h-BN layers h-BN NS hBN NS BN NS FBNNS h-BN BNNS hBN
Type Nano Material
Formula
Role gate dielectrics
9

platinum

Type Single Compound
Formula Pt
Role bottom contact
10

poly(propylene carbonate)

PPC
Type Polymer
Formula
Role dielectric layer
11

chromium

Type Single Compound
Formula Cr
Role adhesion layer
12

gold

Type Single Compound
Formula Au
Role top plunger gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility dependent on reconfigurable operation mode

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • chromium
  • Si/SiO2
Product

hBN-encapsulated MoTe2 device

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • chromium
  • Si/SiO2
Product

hBN-encapsulated MoTe2 device

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • chromium
  • Si/SiO2
Product

hBN-encapsulated MoTe2 device

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • chromium
  • Si/SiO2
Product

hBN-encapsulated MoTe2 device

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • chromium
  • Si/SiO2
Product

hBN-encapsulated MoTe2 device

Size: not specified

Medium/Support: none

References

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