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graphene/h-BN/Si3N4 heterostructure field-effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

n++Si

Type Complex Compound
Formula
Role gate
2

silicon nitride

Type Single Compound
Formula Si3N4
Role gate dielectrics
3

hexagonal boron nitride

h-BN hBN
Type Single Compound
Formula BN
Role gate dielectrics
4

polycrystalline graphene

monolayer graphene graphene PCG
Type Nano Material
Formula
Role semiconductor layer
5

chromium

Type Single Compound
Formula Cr
Role adhesion layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
acoustic deformation potential dependent on gate voltage sign

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • methane
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  2. h1rVudiUtKAvTEBtHvTL0SW4eebp
  3. z3rzty0fWj7oampAx6P
Product

graphene/h-BN/Si3N4 heterostructure field-effect transistor

References

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