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Li-doped In2O3 bottom-gate top-contact thin film transistor

Based on

1 Articles
2017 Most recent source

Composition

1

heavily-doped silicon

Si++
Type Complex Compound
Formula
Role gate
2

hydroxylated silica

hydroxylated SiO2
Type Complex Compound
Formula
Role gate dielectrics
3

lithium-doped indium oxide film

Li-doped In2O3 film Li-In2O3 film
Type Nano Material
Formula
Role semiconductor layer
4

aluminium

aluminum
Type Single Compound
Formula Al
Role source
5

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Source
charge carrier mobility

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • indium(III) nitrate
  1. HRVzFk1bHXjACgG8yRfCRnpbnR6
  2. q872LNOP
Product

Li-doped In2O3 bottom-gate top-contact thin film transistor

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • indium(III) nitrate
  1. iSY8vPHBQpGiMVq57wNd4QdXTqA
  2. 7gWjh3kK
Product

Li-doped In2O3 bottom-gate top-contact thin film transistor

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • indium(III) nitrate
  1. xEV82sxzbySA1bb7KMM8YOzoaqs
  2. XDzzfhGG
Product

Li-doped In2O3 bottom-gate top-contact thin film transistor

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • indium(III) nitrate
  1. POfp1OyvVJcU4tj1Pd7y4NzFkcI
  2. XH1VqUTW
Product

Li-doped In2O3 bottom-gate top-contact thin film transistor

References

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