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transistor based on 2D material WSe2

Based on

1 Articles
2017 Most recent source

Composition

1

highly p-type doped silicon

Type Complex Compound
Formula
Role gate
2

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate dielectrics
3

WSe2 plates

Type Nano Material
Formula
Role channels
4

gold

Type Single Compound
Formula Au
Role drain
5

chromium-gold layer

chromium/gold film Cr/Au film Cr/Au
Type Nano Material
Formula
Role source

Properties

General physical and chemical properties

Property Value Source
drain current dependent on gate voltage

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

transistor based on 2D material WSe2

References

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