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MoS2/TiO2/HgTe hybrid field effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

molybdenum sulfide few-layer flakes

molybdenum(IV) sulfide nanoflakes molybdenum disulfide nanoflakes molybdenum sulfide nanosheets few-layer MoS2 nanoflakes few-layer MoS2 flakes MoS2 few-layer flakes MoS2 nanosheets MoS2 nanoflakes MoS2 flakes 2D MoS2
Type Nano Material
Formula
Role semiconductor layer
4

titanium(IV) oxide

titanium dioxide titanium oxide titania
Type
Formula TiO2
Role
5

ethanedithiol-coated mercury telluride quantum dot film

ethanedithiol-coated HgTe nanoparticle film ethanedithiol-coated HgTe quantum dot film ethanedithiol-coated HgTe nanocrystal film ethanedithiol-coated HgTe QD film
Type
Formula
Role
6

titanium

Type Single Compound
Formula Ti
Role adhesion layer
7

gold

Type Single Compound
Formula Au
Role drain
8

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
carrier transit time

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. VwF1cSYx40WL4FpEH9IrbedS6
Product

MoS2/TiO2/HgTe hybrid field effect transistor

Size: not specified

Medium/Support: none

References

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