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back-gate field effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

molybdenum(IV) sulfide nanosheets-coated hexagonal boron nitride monolayer film

molybdenum(IV) sulfide nanosheets-coated hBN monolayer film MoS2 nanosheets/h-BN monolayer film
Type Nano Material
Formula
Role channel layer
4

Cr/Au

Type Complex Compound
Formula
Role source
5

Cr/Au

Type Complex Compound
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
  1. gySwf9
  2. 0DUnT1b1lwvIkBJnPLhhcqINXCZrxBB
Product

back-gate field effect transistor

Size: not specified

Medium/Support: none

References

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