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AlGaInP-GaInP double heterojunction light-emitting diode

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

n-doped gallium arsenide

n++ GaAs
Type Complex Compound
Formula
Role buffer layer
3

n-doped aluminium gallium indium phosphide

n+-Al0.2Ga0.31In0.49P
Type Complex Compound
Formula
Role n-type semiconductor layer
4

indium gallium phosphide

InGaP
Type
Formula
Role
5

p-doped aluminium gallium indium phosphide

p+-Al0.2Ga0.31In0.49P
Type Complex Compound
Formula
Role p-type semiconducting layer
6

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula GaAs
Role capping layer
7

palladium/germanium/gold trilayer

Pd/Ge/Au trilayer
Type Nano Material
Formula
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Biological effects

Preparation

References

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