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Si/SiO2/cross-linked divinyltetramethyldisiloxane bis(benzocyclobutene)/2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole doped poly(tetrathienoacene-diketopyrrolopyrrole)/gold memory device

Based on

1 Articles
2017 Most recent source

Composition

1

n-type Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

cross-linked divinyltetramethyldisiloxane bis(benzocyclobutene)

cross-linked BCB
Type
Formula
Role
4

2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole doped poly(tetrathienoacene-diketopyrrolopyrrole)

o-MeO-DMBI doped PTDPPTFT4
Type Complex Compound
Formula
Role channels
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • poly(tetrathienoacene-diketopyrrolopyrrole)
  1. zKDv1ZnLbwxZ7YcljrxTwu
  2. pnmDng7
Product

Si/SiO2/cross-linked divinyltetramethyldisiloxane bis(benzocyclobutene)/2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole doped poly(tetrathienoacene-diketopyrrolopyrrole)/gold memory device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • poly(tetrathienoacene-diketopyrrolopyrrole)
  1. TilEGPznUdaBGlTbpNkUie
  2. CoxtjmX
Product

Si/SiO2/cross-linked divinyltetramethyldisiloxane bis(benzocyclobutene)/2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole doped poly(tetrathienoacene-diketopyrrolopyrrole)/gold memory device

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • poly(tetrathienoacene-diketopyrrolopyrrole)
  1. ZrBocT82n88YHF7IBxYjzD
  2. gKsIKht
Product

Si/SiO2/cross-linked divinyltetramethyldisiloxane bis(benzocyclobutene)/2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole doped poly(tetrathienoacene-diketopyrrolopyrrole)/gold memory device

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • poly(tetrathienoacene-diketopyrrolopyrrole)
  1. W00IWhrzz4PRMrZk1PFtU0
  2. kKBVB8x
Product

Si/SiO2/cross-linked divinyltetramethyldisiloxane bis(benzocyclobutene)/2-(2-methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole doped poly(tetrathienoacene-diketopyrrolopyrrole)/gold memory device

Size: not specified

Medium/Support: none

References

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