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back-gated field effect transistor

Based on

1 Articles
2017 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

Mo0.87W0.13S2 nanosheets

Type Nano Material
Formula
Role channel layer
4

Cr/Au film

Type Nano Material
Formula
Role source
5

Cr/Au film

Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on gate voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • chromium
Product

back-gated field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • chromium
Product

back-gated field effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • chromium
Product

back-gated field effect transistor

Size: not specified

Medium/Support: none

References

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